Analysis of the Electronic and Band-Structure in As-grown and Annealed (Ga,Mn)As Epitaxial Layers

Yastrubchak, O.B.; Zuk, J.; Sadowski, J.; Domagala, J.Z.; Wosinski, T.

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Title	Analysis of the Electronic and Band-Structure in As-grown and Annealed (Ga,Mn)As Epitaxial Layers
Authors	Yastrubchak, O.B. Zuk, J. Sadowski, J. Domagala, J.Z. Wosinski, T.
ORCID
Keywords	(Ga,Mn)As Diluted ferromagnetic semiconductor Photoreflectance (PR) spectroscopy Fermi level Band-structure Annealing
Type	Conference Papers
Date of Issue	2012
URI	http://essuir.sumdu.edu.ua/handle/123456789/34993
Publisher	Sumy State University
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Citation	Analysis of the Electronic and Band-Structure in As-grown and Annealed (Ga,Mn)As Epitaxial Layers / O. B. Yastrubchak, J. Zuk, J. Sadowski et al. // Nanomaterials: Applications & Properties (NAP-2012) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2012. - V. 1, No3. - 03TF14
Abstract	The photoreflectance (PR) spectroscopy was applied to study the band-structure evolution in (Ga,Mn)As layers with increasing Mn content. We investigated (Ga,Mn)As layers and, as a reference, undoped GaAs layer, grown by LT-MBE on semi-insulating (001) GaAs substrates. Photoreflectance studies were supported by Raman spectroscopy and high resolution X-ray diffractometry (XRD) measurements. Magnetic properties of the (Ga,Mn)As films were characterized with a superconducting quantum interference device (SQUID) magnetometer. In addition, we investigated impact of the annealing of 100 nm (Ga,Mn)As layers with 6% of the Mn content on the electronic and band structure as well as on the electrical and magnetic properties of these films. Our findings were interpreted in terms of the model, which assumes that the mobile holes residing in the valence band of GaAs and the Fermi level position determined by the concentration of valence-band holes. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/34993
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