Thin Oxide Films on Copper Single Crystals: Anodic Formation and Photoelectrochemical Properties

Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/34994

Or use following links to share this resource in social networks: Recommend this item

Title	Thin Oxide Films on Copper Single Crystals: Anodic Formation and Photoelectrochemical Properties
Authors	Vvedenskii, A.V. Eliseev, D.S. Grushevskaya, S.N. Ganzha, S.V.
ORCID
Keywords	Copper Single crystals Anodic oxide formation Photocurrent Spectroscopy
Type	Conference Papers
Date of Issue	2012
URI	http://essuir.sumdu.edu.ua/handle/123456789/34994
Publisher	Sumy State University
License
Citation	Thin Oxide Films on Copper Single Crystals: Anodic Formation and Photoelectrochemical Properties / A. V. Vvedenskii, D. S. Eliseev, S. N. Grushevskaya, S. V. Ganzha // Nanomaterials: Applications & Properties (NAP-2012) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2012. - V. 1, No3. - 03TF01
Abstract	Thin oxide films were grown anodically on polycrystalline copper and single crystals Cu(100), Cu(110) and Cu(111). Semiconductor properties of copper oxides were obtained by photocurrent measurements. The morphology of the anodic oxides was monitored by SEM. A p-type conductivity was established for Cu2O and СuO formed on Cu during the anodic polarization. The main semiconductor properties do not depend on the crystal face; the band gap in thin Cu2O is equal to 2.2 eV. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/34994
Appears in Collections:	Наукові видання (ЕлІТ)