Raman and Photoluminescence Study of ZnO Films Grown by Chemical Method

Avramenko, K.A.; Romanyuk, A.S.; Roshina, N.N.; Strelchuk, V.V.; Kolomys, O.F.; Zavyalova, L.V.; Svechnikov, S.V.; Snopok, B.A.

Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/35010

Or use following links to share this resource in social networks: Recommend this item

Title	Raman and Photoluminescence Study of ZnO Films Grown by Chemical Method
Authors	Avramenko, K.A. Romanyuk, A.S. Roshina, N.N. Strelchuk, V.V. Kolomys, O.F. Zavyalova, L.V. Svechnikov, S.V. Snopok, B.A.
ORCID
Keywords	ZnO film Raman spectroscopy Photoluminescence MBE
Type	Conference Papers
Date of Issue	2012
URI	http://essuir.sumdu.edu.ua/handle/123456789/35010
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Raman and Photoluminescence Study of ZnO Films Grown by Chemical Method / K. A. Avramenko, À. S. Romanyuk, N. N. Roshina et al. // Nanomaterials: Applications & Properties (NAP-2012) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2012. - V. 1, No3. - 03TF12
Abstract	In this paper phonon and emission properties of ZnO films grown by metalorganic chemical vapour deposition (MOCVD) at ambient pressure and by molecular beam epitaxy (MBE) are investigated using Raman and photoluminescence (PL) spectroscopy. It is shown that high-frequency shift of non-polar phonon modes corresponds to elastic compressive strain in the plane parallel to c-axis and is equal to 3.2×10−3 and 2.2×10−3 for ZnO film grown by MOCVD and MBE, respectively. The possibility of obtaining highquality ZnO films grown by MOCVD was demonstrated. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35010
Appears in Collections:	Наукові видання (ЕлІТ)