Electrical Properties of High-k Oxide in Pd/Al2O3/InGaAs Stack

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Title	Electrical Properties of High-k Oxide in Pd/Al2O3/InGaAs Stack
Authors	Gomeniuk, Yu.Y. Nazarov, A.N. Monaghan, S. Cherkaoui, K. O’Connor, E. Povey, I. Djara, V. Hurley, P.K.
ORCID
Keywords	High-k oxide InGaAs MOS structure MOSFET C-V ALD Interface states
Type	Conference Papers
Date of Issue	2012
URI	http://essuir.sumdu.edu.ua/handle/123456789/35048
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Electrical Properties of High-k Oxide in Pd/Al2O3/InGaAs Stack / Y. Y. Gomeniuk, A. N. Nazarov, S. Monaghan et al. // Nanomaterials: Applications & Properties (NAP-2012) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2012. - V.1, No3. - 03TF16
Abstract	The paper presents the results of capacitance-voltage (C-V) characterization of metal-oxidesemiconductor (MOS) structure, namely Pd/Al2O3/ In0.53Ga0.47As/InP. It is shown that MOS structure under study exhibit both electron and hole trapping with permanent and temporary charge trapping contributions. The interfacial transition layer between the high-k oxide and InGaAs has the greatest influence on this charge trapping phenomenon. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35048
Appears in Collections:	Наукові видання (ЕлІТ)