Spectral Response of Indium Oxynitride Thin Films

Abstract

In this work we study the electrical properties as spectral response, resistivity and quantum efficiency of nanostructured indium oxynitride deposited by reactive RF magnetron sputtering. This material shows multi-functionality in electrical and photonic applications. It shows transparency in visible range, wide band gap, high resistivity, low linkage current and response for light. The deposition processes were performed in a home build magnetron sputtering system, using a four-inch pure In (99.999 %) target, nitrogen and oxygen as process gases. The pressure was kept constant in 1.33 Pa and the RF power (13.56 MHz) was constant 250 W. The spectral response was estimated for samples deposited with 0 %, 10 %, 20 %, 50 %, 80 % and 85 % of oxygen concentration in the gas mixture. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35081