Electrical Properties of Al/p-Si Structures with Colchicine Organic Thin Film

Gullu, O.; Ruzgar, S.; Asubay, S.; Ozerden, E.; Kilicoglu, T.; Turut, A.

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Title	Electrical Properties of Al/p-Si Structures with Colchicine Organic Thin Film
Authors	Gullu, O. Ruzgar, S. Asubay, S. Ozerden, E. Kilicoglu, T. Turut, A.
ORCID
Keywords	Electronic Materials Organic Films Barrier Height Ideality Factor Surfaces Interfaces
Type	Conference Papers
Date of Issue	2012
URI	http://essuir.sumdu.edu.ua/handle/123456789/35140
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Electrical Properties of Al/p-Si Structures with Colchicine Organic Thin Film ] / O. Gullu, S. Ruzgar, S. Asubay et al. // Nanomaterials: Applications & Properties (NAP-2012) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2012. - V. 1, No3. - 03PCSI05
Abstract	In this study, we have fabricated an Al/Colchicine/p-Si structure and have investigated its current– voltage (I–V) and capacitance–voltage (C–V) characteristics at room temperature. The barrier height and ideality factor values of 0.68 eV and 3.22, respectively, have been obtained from the I-V plot. The value of the barrier height was compared with the barrier height value of 0.50 eV of a conventional Al/p-Si diode. This was attributed to the Colchicine organic film modifying the effective barrier height by affecting the space charge region of the inorganic Si semiconductor substrate. By using C – 2-V characteristics the diffusion potential value has been extracted as 1.32 V. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35140
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