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Title | Laser Raman-Spectroscopy of Phase Transformation in the Near Surface of GaP |
Authors |
Gotoshia, S.V.
Gotoshia, L.V. |
ORCID | |
Keywords |
Raman Scattering Implantation Amorphization Microcrystalline Nanocrystalline Semiconductors |
Type | Conference Papers |
Date of Issue | 2012 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/35159 |
Publisher | Sumy State University |
License | Copyright not evaluated |
Citation | Gotoshia, S. V. Laser Raman-Spectroscopy of Phase Transformation in the Near Surface of GaP / S. V. Gotoshia, L. V. Gotoshia // Nanomaterials: Applications & Properties (NAP-2012) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2012. - V. 1, No3. - 03PCSI10 |
Abstract |
When implanting GaP with boron and heavier argon ions, severe distortion of crystal structure occurs.
Raman scattering has shown that with implanted ion dose change the crystal structure transforms
gradually into disordered state, in which coexisting of crystalline, microcrystalline, nanocrystalline and
amorphous phases is possible. At the certain stage of implantation the formation of continuous amorphous
layer of GaP takes place. The critical doses of amorphization of GaP at implantation with B and Ar ions
have been defined. The graph of dependence of LO phonon halfwidths upon implantation doses is also a
characteristic of synthesizing of nano-GaP. We suggest a possible mechanism for structural transition
dynamics in GaP caused by ion implantation.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35159 |
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