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Title Oxygen Behavior Around Heavily Doped Ultra-Shallow Junction in Si
Authors Oberemok, O.S.
Gudymenko, O.Yo.
Lytovchenko, V.G.
Melnyuk, V.P.
ORCID
Keywords ion implantation
interface
arsenic
junction
diffusion
gettering
oxygen
Type Conference Papers
Date of Issue 2012
URI http://essuir.sumdu.edu.ua/handle/123456789/35166
Publisher Sumy State University
License
Citation Oxygen Behavior Around Heavily Doped Ultra-Shallow Junction in Si / O. S. Oberemok, O. Y. Gudymenko, V. G. Lytovchenko, V. P. Melnyuk // Nanomaterials: Applications & Properties (NAP-2012) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2012. - V. 1, No3. - 03PCSI13
Abstract The diffusion and gettering of oxygen are investigated after low-energy arsenic implantation and furnace annealing of SiO2/Si structures. Secondary ion mass spectrometry was used for examination of arsenic and oxygen depth profiles. It is shown that arsenic-doped ultra-shallow junction in Si stimulates the background oxygen gettering by SiO2/Si interface at the annealing temperatures higher than 850 C. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35166
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