Oxygen Behavior Around Heavily Doped Ultra-Shallow Junction in Si

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Title	Oxygen Behavior Around Heavily Doped Ultra-Shallow Junction in Si
Authors	Oberemok, O.S. Gudymenko, O.Yo. Lytovchenko, V.G. Melnyuk, V.P.
ORCID
Keywords	ion implantation interface arsenic junction diffusion gettering oxygen
Type	Conference Papers
Date of Issue	2012
URI	http://essuir.sumdu.edu.ua/handle/123456789/35166
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Oxygen Behavior Around Heavily Doped Ultra-Shallow Junction in Si / O. S. Oberemok, O. Y. Gudymenko, V. G. Lytovchenko, V. P. Melnyuk // Nanomaterials: Applications & Properties (NAP-2012) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2012. - V. 1, No3. - 03PCSI13
Abstract	The diffusion and gettering of oxygen are investigated after low-energy arsenic implantation and furnace annealing of SiO2/Si structures. Secondary ion mass spectrometry was used for examination of arsenic and oxygen depth profiles. It is shown that arsenic-doped ultra-shallow junction in Si stimulates the background oxygen gettering by SiO2/Si interface at the annealing temperatures higher than 850 C. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35166
Appears in Collections:	Наукові видання (ЕлІТ)