The Comparative Investigations of Structural and Optical Properties of GaSb nanocrystals / Si layers

Greben, M.V.; Komarov, F.F.; Vlasukova, L.A.; Milchanin, O.V.; Mudryi, A.V.; Parkhomenko, I.N.

Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/35169

Or use following links to share this resource in social networks: Recommend this item

Title	The Comparative Investigations of Structural and Optical Properties of GaSb nanocrystals / Si layers
Authors	Greben, M.V. Komarov, F.F. Vlasukova, L.A. Milchanin, O.V. Mudryi, A.V. Parkhomenko, I.N.
ORCID
Keywords	Crystalline silicon GaSb nanocrystals High-fluence implantation Broad band emission
Type	Conference Papers
Date of Issue	2013
URI	http://essuir.sumdu.edu.ua/handle/123456789/35169
Publisher	Sumy State University
License
Citation	The Comparative Investigations of Structural and Optical Properties of GaSb nanocrystals / Si layers [Текст] / M.V. Greben, F.F. Komarov, L.A. Vlasukova et al. // Nanomaterials: Applications & Properties (NAP-2013) : 3-rd International conference, Alushta, the Crimea, Ukraine, September 16-21, 2013 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No2. - 02PCN16
Abstract	Optical and structural properties of GaSb nanocrystals fabricated by co-implantation of Ga and Sb ions in single crystalline Si (100), followed by thermal treatment are investigated. In the first group of samples named Si / GaSb the implantation of Ga ions was followed by Sb implantation, whereas in the second group of samples named Si / SbGa with increased by factor 1.4 ion fluence the order of implantation was inverted. The presence of nanocrystals in both kinds of samples was proved by TEM and RS experiments. Low-temperature PL measurements show a PL broad band in the region at 0.75-1.1 eV for Si / SbGa samples annealed at 900 °C. No PL was observed in the Si/SbGa samples after annealing at 1100 °C. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35169
Appears in Collections:	Наукові видання (ЕлІТ)