Photochemical Behavior of Type-II Semiconductor Heterodimers

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Title	Photochemical Behavior of Type-II Semiconductor Heterodimers
Authors	Teranishi, T.
ORCID
Keywords	Photochemical behavior Charge separation Semiconductor Type-II alignment Heterodimer
Type	Conference Papers
Date of Issue	2013
URI	http://essuir.sumdu.edu.ua/handle/123456789/35176
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Teranishi, T. Photochemical Behavior of Type-II Semiconductor Heterodimers [Текст] / T. Teranishi // Nanomaterials: Applications & Properties (NAP-2013) : 3-rd International conference, Alushta, the Crimea, Ukraine, September 16-21, 2013 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No2. - 02PCN20
Abstract	Type-II semiconductor heterodimers with a staggered alignment of band edges at the heterointerface can promote spatial charge separation of the electron and hole in different parts of the heterodimer for photocatalytic and photovoltaic applications. In this paper, the two kinds of CdS-based type-II semiconductor heterodimers were successfully synthesized. Type-II CdS-CdTe heterodimers without any defects exhibited clear photo-induced electron transfer, whereas CdS-Cu31S16 heterodimers showed dominant consumption of photogenerated carries via vacancy-induced decay processes. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35176
Appears in Collections:	Наукові видання (ЕлІТ)