Enhanced Luminescence of InGaN / GaN Vertical Light Emitting Diodes with an InGaN Protection Layer

Lam, N.D.; Kim, S.; Lee, J.J.; Choi, K.R.; Doan, M.H.; Lim, H.

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Title	Enhanced Luminescence of InGaN / GaN Vertical Light Emitting Diodes with an InGaN Protection Layer
Authors	Lam, N.D. Kim, S. Lee, J.J. Choi, K.R. Doan, M.H. Lim, H.
ORCID
Keywords	GaN InGaN LEDs Laser lift-off Recombination enhanced defect reaction
Type	Conference Papers
Date of Issue	2013
URI	http://essuir.sumdu.edu.ua/handle/123456789/35210
Publisher	Sumy State University
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Citation	Enhanced Luminescence of InGaN / GaN Vertical Light Emitting Diodes [Текст] / N.D. Lam, S. Kim, J.J. Lee et al. // Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No1. - 01NTF29
Abstract	We have investigated the effectiveness of a thin n-In0.2Ga0.8N layer inserted in the bottom n-GaN layer of InGaN/GaN blue light emitting diodes (LEDs) for the protection of multiple quantum wells during the laser lift-off process for vertical LED fabrication. The photoluminescence properties of the InGaN/GaN lateral LEDs are nearly identical irrespective of the existence of the n-In0.2Ga0.8N insertion layer in the bottom n-GaN layer. However, such an insertion is found to effectively increase the photoluminescence intensity of the multiple quantum well and the carrier lifetime of the vertical LEDs. These improvements are attributed to the reduced defect generations in the vertical LEDs during the laser lift-off process due to the presence of the protection layer. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35210
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