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Title | Depth Profiling of Multilayer Mo/Si Nanostructures |
Authors |
Tolstoguzov, A.
Ber, B. Chapon, P. Drozdov, M.N. |
ORCID | |
Keywords |
Sputter Depth Profiling Glow Discharge Optical Emission Spectroscopy (GDOES) Mo/Si In-terferential Mirror Round-robin Characterization, Secondary Ion Mass Spectrometry (SIMS) |
Type | Conference Papers |
Date of Issue | 2013 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/35262 |
Publisher | Sumy State University |
License | |
Citation | Depth Profiling of Multilayer Mo/Si Nanostructures [Текст] / A. Tolstoguzov, B. Ber, P. Chapon, M. N. Drozdov // Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No1. - 01PCSI08 |
Abstract |
A round-robin characterization is reported on the sputter depth profiling of [60(3.0 nm Mo/ 0.3 nm B4C/ 3.7 nm Si)] and [60 (3.5 nm Mo/ 3.5 nm Si)] stacks deposited on Si (111). Two different commercial secondary ion mass spectrometers with time-of-flight and magnetic-sector analyzers and a pulsed radio frequency glow discharge optical emission spectrometer were used. The pros and cons of each instrumental approach are discussed.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35262 |
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