Depth Profiling of Multilayer Mo/Si Nanostructures

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Title	Depth Profiling of Multilayer Mo/Si Nanostructures
Authors	Tolstoguzov, A. Ber, B. Chapon, P. Drozdov, M.N.
ORCID
Keywords	Sputter Depth Profiling Glow Discharge Optical Emission Spectroscopy (GDOES) Mo/Si In-terferential Mirror Round-robin Characterization, Secondary Ion Mass Spectrometry (SIMS)
Type	Conference Papers
Date of Issue	2013
URI	http://essuir.sumdu.edu.ua/handle/123456789/35262
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Depth Profiling of Multilayer Mo/Si Nanostructures [Текст] / A. Tolstoguzov, B. Ber, P. Chapon, M. N. Drozdov // Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No1. - 01PCSI08
Abstract	A round-robin characterization is reported on the sputter depth profiling of [60(3.0 nm Mo/ 0.3 nm B4C/ 3.7 nm Si)] and [60  (3.5 nm Mo/ 3.5 nm Si)] stacks deposited on Si (111). Two different commercial secondary ion mass spectrometers with time-of-flight and magnetic-sector analyzers and a pulsed radio frequency glow discharge optical emission spectrometer were used. The pros and cons of each instrumental approach are discussed. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35262
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