Effect of Added Nitrogen on Properties of SiCN Films Prepared by PECVD Using Hexamethyldisilazane

Porada, O.K.; Kozak, A.O.; Ivashchenko, L.A.; Ivashchenko, V.I.; Tomila, T.V.

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Title	Effect of Added Nitrogen on Properties of SiCN Films Prepared by PECVD Using Hexamethyldisilazane
Authors	Porada, O.K. Kozak, A.O. Ivashchenko, L.A. Ivashchenko, V.I. Tomila, T.V.
ORCID
Keywords	PECVD Hexamethyldisilazane SiCN films FTIR Nanoindentation
Type	Conference Papers
Date of Issue	2013
URI	http://essuir.sumdu.edu.ua/handle/123456789/35320
Publisher	Sumy State University
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Citation	Effect of Added Nitrogen on Properties of SiCN Films Prepared by PECVD Using Hexamethyldisilazane [Текст] / O.K. Porada, A.O. Kozak, L.A. Ivashchenko et al. // Nanomaterials: Applications & Properties (NAP-2013) : 3-rd International conference, Alushta, the Crimea, Ukraine, September 16-21, 2013 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No2. - 02FNC11
Abstract	Silicon carbonitride thin films were obtained by plasma-enhanced chemical vapor deposition using native precursor hexamethyldisilazane with a nitrogen addition. Films were investigated by X-ray diffraction spectroscopy, Fourier transform infrared spectroscopy and nanoindentation. It is established that all the films were X-ray amorphous. An increase in nitrogen flow rate leads to increasing the number of Si-N bonds, which, in turn, promotes the rise of nanohardness and elastic modulus up to 20 GPa and 160 GPa, respectively. The optimum deposition parameters were established. The films can be recommended as hard coatings for strengthening cutting tools. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35320
Appears in Collections:	Наукові видання (ЕлІТ)