Retention Behaviour of MNOS Memory Devices with Embedded Si or Ge Nanocrystals – Computer Simulation

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Title	Retention Behaviour of MNOS Memory Devices with Embedded Si or Ge Nanocrystals – Computer Simulation
Authors	Molnár, K.Z. Turmezei, P. Horváth, Zs.J. Kovács, B.
ORCID
Keywords	Non-volatile memory MNOS Tunneling Retention
Type	Conference Papers
Date of Issue	2013
URI	http://essuir.sumdu.edu.ua/handle/123456789/35385
Publisher	Sumy State University
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Citation	Retention Behaviour of MNOS Memory Devices with Embedded Si or Ge Nanocrystals – Computer Simulation [Текст] / K.Z. Molna'r, P. Turmezei, Z.J. Horva'th et al. // Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No4. - 04NAESP14
Abstract	The charge retention behaviour of MNOS structures with embedded Si or Ge nanocrystals are studied by computer simulation. It is obtained that the oxide thickness and the location of nanocrystlas affect the retention behaviour very strongly. The retention time changes from a few ms to several years. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35385
Appears in Collections:	Наукові видання (ЕлІТ)