Influence of Substrate Temperature on the Optical Properties and the Deposition Rate of Amorphous Silicon Films

Abstract

Layers of intrinsic hydrogenated amorphous silicon (a-Si:H) films were deposited using Gas-Jet Electron Beam Plasma Chemical Vapor Deposition (GJ-EBP-CVD) technique. The optical parameters (refraction index (n), absorption coefficient ( )) and the thickness were determined from the extremes of the interference fringes of transmission spectrum in the range of 500 – 1000 nm using the envelope method and method PUMA. The spectral dependence of the refractive index and absorption coefficient was obtained by varying the substrate temperature (Ts). The optical band gap (Eg) was determined using Tauc method and the estimated values were in range 1.88 – 1.78 eV for various substrate temperatures. The calculated thicknesses for all samples were about 1 micrometer. The film’s deposition rate as a function of the substrate temperature was found. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35394