Correlation between Crystallographic Alignment of Self-induced GaN Nanowires and Features of Si(111) Nitridation

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Title	Correlation between Crystallographic Alignment of Self-induced GaN Nanowires and Features of Si(111) Nitridation
Authors	Kuchuk, A. Kladko, V. Lytvyn, P. Stanchu, H. Sobancka, M. Wierzbicka, A. Klosek, K. Zytkiewicz, Z.R.
ORCID
Keywords	GaN Nanowires Si (111) Crystallographic alignment Nitridation
Type	Conference Papers
Date of Issue	2013
URI	http://essuir.sumdu.edu.ua/handle/123456789/35402
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Correlation between Crystallographic Alignment of Self-induced GaN Nanowires and Features of Si(111) Nitridation [Текст] / A. Kuchuk, V. Kladko, P. Lytvyn et al. // Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No4. - 04NAESP21
Abstract	Formation and spatial ordering of self-induced GaN nanowires grown by molecular beam epitaxy on a spatially pre-nitridazed Si(111) substrate have been studied. It was found the close correlation between Si substrate nitridation parameters and crystallographic alignment of NWs. Conditions for NWs nucleation and in- plane orientation are predefined by a structural anisotropy of silicon nitride nanolayer. Mechanism of NWs orderly emergence suggested. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35402
Appears in Collections:	Наукові видання (ЕлІТ)