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Title | Simulation of the Mechanism of Defect Structure Formation in Polycrystalline Indium Oxide Under Ion Irradiation |
Authors |
Soloviova, Oleksandra Omelianivna
|
ORCID | |
Keywords |
Indium oxide Structural defects Phase transitions Stresses |
Type | Conference Papers |
Date of Issue | 2012 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/35411 |
Publisher | Sumy State University |
License | |
Citation | Solovyova, A. E. Simulation of the Mechanism of Defect Structure Formation in Polycrystalline Indium Oxide Under Ion Irradiation / A. E. Solovyova // Nanomaterials: Applications & Properties (NAP-2012) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2012. - V. 1, No4. - 04PITSE11 |
Abstract |
The structural changes in polycrystalline indium oxide were studied before and after irradiation of
samples, Xe+ ions with energy 140 and 300 keV, X-ray methods. Discovery, that irradiation leads to a
change in the chemical composition of the oxide, accompanied by phase transformations. The main structure
of the cubic oxide after irradiation contain macro and micro stresses, which depend on the energy irradiation.
The increase in the relative integral intensity of radiation reflected from the planes of the cell on
depth was observed. The maximum value observed at a depth of 1.5 m from the plane (510). The analyses
of reflected the radiation found that the flux of photons remains constant - the atomic nuclei of oxide not
change, increases the frequency, decreases the wavelength depend from the energy irradiation. In some directions
in reflecting from the planes, the atoms are formed with different electron density, that connect
whit presence of defects, which leads to appear of the forced oscillation, which increases the relative integral
intensity of the reflected radiation. These processes are damped with increasing depth of the sample.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35411 |
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