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Title Structural Peculiarities of A3B5 Nanocrystals Created in Si by Ion-Beam Synthesis
Authors Vlasukova, L.
Komarov, F.
Milchanin, O.
Parkhomenko, I.
Zuk, J.
ORCID
Keywords Crystalline silicon
InAs nanocrystals
High-fluence implantation
Thermal treatment
Type Conference Papers
Date of Issue 2012
URI http://essuir.sumdu.edu.ua/handle/123456789/35436
Publisher Sumy State University
License
Citation Structural Peculiarities of A3B5 Nanocrystals Created in Si by Ion-Beam Synthesis / L. Vlasukova, F. Komarov, O. Milchanin et al. // Nanomaterials: Applications & Properties (NAP-2012) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2012. - V. 1, No4. - 04RES08
Abstract We reported the structure peculiarities of nanocrystals formed in Si by means of high-fluence implantation at 25 and 500 °С followed by rapid thermal annealing (RTA). The structure of implanted samples has been investigated by means of transmission electron microscopy (TEM). The crystalline nature of the precipitates is proved by the Moiré fringe patterns presence in the TEM images. The Moiré fringe distance (Moiré period) is equal of 1.8 nm for small precipitates. This experimental value coincides with the calculated one for crystalline InAs. It is noted a Moiré period increasing in the case of large precipitates. We suppose that this feature is a result of surplus As or In atoms embedded in precipitates. One can see an interesting effect – “glowng” of nanocrystal/Si interfaces at the dark-field images of implanted and annealed samples. We ascribe this effect to a presence of misfit dislocation networks at the InAs/Si interfaces generated as a result of strain relaxation in highly mismatched InAs/Si system. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35436
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