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Title | Design and Fabrication Heterojunction Solarcell of Si-CdS-ZnO Thin Film |
Authors |
Ivashchenko, Maksym Mykolaiovych
![]() Pohrebniak, Oleksandr Dmytrovych ![]() Abdulla, S.N. Muhammed, A.A.K. |
ORCID |
http://orcid.org/0000-0002-4611-0956 http://orcid.org/0000-0002-9218-6492 |
Keywords |
Zinc oxide Solar cell Film thickness Layer Simulation |
Type | Conference Papers |
Date of Issue | 2012 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/35487 |
Publisher | Sumy State University |
License | Copyright not evaluated |
Citation | Design and Fabrication Heterojunction Solarcell of Si-CdS-ZnO Thin Film / N. Y. Jamil, M. M. Ivashchenko, S. N. Abdulla et al. // Nanomaterials: Applications & Properties (NAP-2012) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2012. - V. 1, No4. - 04NMEEE09 |
Abstract |
Cadmium sulphide (CdS) is a prominent candidate to be used a buffer layer in Si based solar cell. In
this study, absorber layer parameters thickness have been investigated by (SCAPS) to find out the higher
conversion. Moreover, it is found that Jsc,Voc, η is increased for the absorber layer thickness of 500-600 nm
and quantum efficiency is nearly overlap after the 600 nm thickness of the Si absorber layer. In addition, it
is revealed that the highest efficiency cell can be achieved with the absorber layer thickness of 600 nm.
From the simulation results, numerous influences of absorber layer are investigated in Si/CdS/ZnO solar
cell which can lead to the fabrication of high efficiency devices. Experimentally the designed cell fabricated
and the electrical properties measured also Jsc ,Voc ( with lower values) as Si thickness increased until
600 nm. And best efficiency value calculated was 8.9%.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35487 |
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