Modeling of Field Effect Mobility Using Grain Boundaries on Nanocrystalline Silicon Thin-Film Transistor (nc-Si TFT)

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Title	Modeling of Field Effect Mobility Using Grain Boundaries on Nanocrystalline Silicon Thin-Film Transistor (nc-Si TFT)
Authors	Abhishek M., Prachi Sh., Navneet G.,
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Keywords	Grain boundaries Nanocrystalline silicon TFT
Type	Article
Date of Issue	2013
URI	http://essuir.sumdu.edu.ua/handle/123456789/35543
Publisher	Sumy State University
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Citation	Abhishek, M. Modeling of Field Effect Mobility Using Grain Boundaries on Nanocrystalline Silicon Thin-Film Transistor (nc-Si TFT) [Текст] / M. Abhishek, S. Prachi, G. Navneet // Журнал нано- та електронної фізики. - 2013. - Т.5, №4, Ч.ІІ. - 04054.
Abstract	High field effect mobility thin film transistors find immense application in active matrix liquid crystal display (AMLCD) or active matrix organic light emitting diode (AMOLED) displays [1], [2]. Amorphous silicon is easily deposited over large areas at low deposition temperatures (below 450°C) but it suffers degradation under bias stress and under illumination.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)