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Title Mechanically Stacked Triple-junction GaInP / GaAs / Si Solar Cell Simulation
Authors Gnilenko, A.B.
Plaksin, S.V.
ORCID
Keywords Solar cell
Triple-junction
Mechanically stacked
GaInP / GaAs / Si
Silvaco TCAD
Type Article
Date of Issue 2013
URI http://essuir.sumdu.edu.ua/handle/123456789/35548
Publisher Sumy State University
License
Citation Gnilenko, A. B. Mechanically Stacked Triple-junction GaInP / GaAs / Si Solar Cell Simulation [Текст] / A. B. Gnilenko, S. V. Plaksin // Журнал нано- та електронної фізики. - 2013. - Т.5, №4, Ч.ІІ. - 04057.
Abstract Mechanically stacked triple-junction GaInP / GaAs / Si solar cell is simulated by Silvaco TCAD computer software and compared to more conventional GaInP / GaAs / Ge mechanically stacked configuration. External quantum efficiency, I-V characteristics and basic I-V parameters are obtained to demonstrate the advantages of using the silicon active substrate as the bottom sub-cell instead of the germanium substrate based bottom sub-cell. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35548
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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