Please use this identifier to cite or link to this item:
http://essuir.sumdu.edu.ua/handle/123456789/35551
Or use following links to share this resource in social networks:
Tweet
Recommend this item
Title | Comparison of Atomic Level Simulation Studies of MOSFETs Containing Silica and Lantana Nanooxide Layers |
Authors |
Bikshalu, K.
Manasa, M.V. Reddy, V.S.K. Reddy, P.C.S. Venkateswara Rao, K. |
ORCID | |
Keywords |
MOSFET Nano oxide layer Quantum mechanical tunneling Transmission spectra I-V characteristics Channel conductance |
Type | Article |
Date of Issue | 2013 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/35551 |
Publisher | Sumy State University |
License | Copyright not evaluated |
Citation | Comparison of Atomic Level Simulation Studies of MOSFETs Containing Silica and Lantana Nanooxide Layers [Текст] / K. Bikshalu, M. V. Manasa, V. S. Reddy et al. // Журнал нано- та електронної фізики. - 2013. - Т.5, №4, Ч.ІІ. - 04058. |
Abstract |
The intense downscaling of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) to nano range for improving the device performance requires a high-k dielectric material instead of conventional silica (SiO2) as to avoid Quantum Mechanical Tunneling towards the gate terminal which leads to unnecessary gate current. Out of all the rare earth oxide materials, since lanthana (La2O3) has significantly high dielectric constant (k) and bandgap, we’ve chosen it as oxide layer for one of the MOSFETs. In this work, we simulated two MOSFETs – one with nano SiO2 oxide layer and other with nano La2O3 oxide layer in the atomic level to analyze and compare the transmission spectra, I-V characteristics and Channel conductance of both the MOSFETs.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35551 |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
Views

1

1

55327

30027

1634527590

1

1

319638883

1

30041

9

6

1857579442

2050799455

1013064716

279913593

2455658
Downloads

1

1013064718

1

2

1

2

1

1

1

34

118458

1

-1677291024

60

26558090
Files
File | Size | Format | Downloads |
---|---|---|---|
8B4A5d01.pdf | 366.05 kB | Adobe PDF | -637549653 |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.