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Title | Investigation of CNTFET Performance with Gate Control Coefficient Effect |
Authors |
Khan, S.A.
Hasan, M. Mominuzzaman, S.M. |
ORCID | |
Keywords |
Gate Control Coefficient CNTFET Drain сurrent Transconductance |
Type | Article |
Date of Issue | 2014 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/35983 |
Publisher | Sumy State University |
License | Copyright not evaluated |
Citation | S.A. Khan, M. Hasan, S.M. Mominuzzaman, J. Nano- Electron. Phys. 6 No 2, 02008 (2014) |
Abstract |
For the first time, a deep study of gate control coefficient (αG) effect on CNTFET performance has done
in this research. A new, analytical CNTFET simulation along with multiple parameter approach has executed
with 3D output in MATLAB and that used it to examine device performance. It is found that, drain
current and transconductance increases with high gate control coefficient. On the other hand, total capacitance
decreases with high αG value resulting improved charging energy. Likewise, drain induced barrier
lowering (DIBL) decreases with αG that provides less deviation from ideal device performance. Finally, subthreshold
swing comes very close to the theoretical limit at high αG which is desired for low threshold voltage
and low-power operation for FETs scaled down to small sizes.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35983 |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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File | Size | Format | Downloads |
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Investigation of CNTFET Performance with Gate Control Coefficient Effect.pdf | 348.27 kB | Adobe PDF | 1601879534 |
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