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Title | Evaluation of Vertical Coherence Length, Twist and Microstrain of GaAs / Si Epilayers Using Modified Williamson-Hall Analysis |
Authors |
Ravi Kumar,
Tapas Ganguli, Vijay Chouhan, Dixit, V.K. Puspen Mondal, Srivastava, A.K. Mukherjee, C. Sharma, T.K. |
ORCID | |
Keywords |
HRXRD GaAs / Si Anti Phase domain Microstructure Williamson-Hall analysis |
Type | Article |
Date of Issue | 2014 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/35988 |
Publisher | Sumy State University |
License | Copyright not evaluated |
Citation | Ravi Kumar, Tapas Ganguli, Vijay Chouhan, et al., J. Nano- Electron. Phys. 6 No 2, 02010 (2014) |
Abstract |
Modified Williamson-Hall (WH) analysis is used to determine the reliable values of the microstructures for
Zincblende epilayers grown on non-polar substrates. Systematic high resolution X-ray diffraction (HRXRD) experiments
are performed for several skew symmetric reflections which enable an accurate measurement of the
values of vertical coherence length (VCL) and microstrain of GaAs epilayers grown on Si. Furthermore, a simple
method based on the orientation of Burgers vector is proposed for estimating the ratio of tilt and twist. In this
method, the twist can be found easily once tilt is known. It is rather quick and the measured values of twist are
very similar to those which are otherwise estimated by acquiring numerous HRXRD scans along with tedious
fitting procedures. Presence of 60 mixed dislocations is confirmed from the cross sectional high resolution
transmission electron microscope images of GaAs / Si samples. Furthermore, the estimated value of VCL is
equivalent to the layer thickness measured by the surface profiler.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35988 |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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File | Size | Format | Downloads |
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Evaluation of Vertical Coherence Lengt.pdf | 839.81 kB | Adobe PDF | 513654678 |
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