Control of the Parameters of GaAs:Si p-n Structures by Gyrotron Irradiation

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Title	Control of the Parameters of GaAs:Si p-n Structures by Gyrotron Irradiation
Authors	Sukach, G.A. Kidalov, V.V.
ORCID
Keywords	gyrotron irradiation гіротрон опромінення гиротрон облучения light-emitting structures світловипромінювальні структури светоизлучающие структуры thermoelastic stresses термопружна напруга термоупругое напряжение
Type	Article
Date of Issue	2011
URI	http://essuir.sumdu.edu.ua/handle/123456789/36013
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Sukach, G.A. Control of the Parameters of GaAs:Si p-n Structures by Gyrotron Irradiation [Текст] / G.A. Sukach, V.V. Kidalov // Journal of Nano- and Electronic Physics. — 2011. — Vol.3, №4. — P. 99-108.
Abstract	It is shown that using gyrotron irradiation it is possible to control the p-n junction in an already fabricated light-emitting structure. Shift of the compensated region of emitting structure based on GaAs:Si is conditioned by the motion of impurities in the field of thermoelastic stresses appearing during cooling of the samples after gyrotron irradiation. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/36013
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)