Impurity Influence on Nitride LEDs

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Title	Impurity Influence on Nitride LEDs
Authors	Rabinovich, O.I. Legotin, S.A. Didenko, S.I.
ORCID
Keywords	Light emitting diode AlGaInN Simulation Quantum efficiency
Type	Article
Date of Issue	2014
URI	http://essuir.sumdu.edu.ua/handle/123456789/36102
Publisher	Sumy State University
License	Copyright not evaluated
Citation	O.I. Rabinovich, S.A. Legotin, S.I. Didenko, J. Nano- Electron. Phys. 6 No 3, 03002 (2014)
Abstract	Light emitting diodes (LEDs) are widely used nowadays. They are used in major parts of our life. But it is still necessary to improve their characteristics. In this paper the impurity and Indium atoms influence on the LEDs characteristics is investigated by computer simulation. Simulation was carried out in Sim Windows. The program was improved for this purpose by creating new files for AlGaInN heterostructure and devices including more than 25 basic parameters. It was found that characteristics depend on impurity and indium atoms changes a lot. The optimum impurity concentration for doping barriers between quan-tum wells was achieved. By varying impurity and Indium concentration the distribution in AlGaInN het-erostructure LEDs characteristics could be improved. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/36102
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)