On the Applicability of HF and μ-PCD Methods for Determination of Carrier Recombination Lifetime in the Non-passivated Single-crystal Silicon Samples

Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/36130

Or use following links to share this resource in social networks: Recommend this item

Title	On the Applicability of HF and μ-PCD Methods for Determination of Carrier Recombination Lifetime in the Non-passivated Single-crystal Silicon Samples
Authors	Anfimov, I.M. Kobeleva, S.P. Schemerov, I.V. Orlova, M.N.
ORCID
Keywords	Single-crystal silicon Contactless μ-PCD method Carrier recombination lifetime Photocon-ductivity decay
Type	Article
Date of Issue	2014
URI	http://essuir.sumdu.edu.ua/handle/123456789/36130
Publisher	Sumy State University
License	Copyright not evaluated
Citation	I.М. Anfimov, S.P. Kobeleva, I.V. Schemerov, M.N. Orlova, J. Nano- Electron. Phys. 6 No 3, 03018 (2014)
Abstract	Comparison of the results of measuring the carrier recombination lifetime in silicon single crystals by contactless HF and microwave μ-PCD methods was carried out. It has been shown that HF method gives a large error compared with a μ-PCD method. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/36130
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)