Photosensitive AlGaAs / GaAs Structures Grown by Molecular Beam Epitaxy

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Title	Photosensitive AlGaAs / GaAs Structures Grown by Molecular Beam Epitaxy
Authors	Bazalevsky, M.A. Koltsov, G.I. Didenko, S.I. Yurchuk, S.Yu. Legotin, S.A. Rabinovich, O.I. Murashev, V.N. Kazakov, I.P.
ORCID
Keywords	Molecular beam epitaxy AlGaAs / GaAs Photodetector Ultraviolet Scintillator
Type	Article
Date of Issue	2014
URI	http://essuir.sumdu.edu.ua/handle/123456789/36131
Publisher	Sumy State University
License	Copyright not evaluated
Citation	M.A. Bazalevsky, G.I. Koltsov, S.I. Didenko, et al., J. Nano- Electron. Phys. 6 No 3, 03019 (2014)
Abstract	AlGaAs / GaAs photosensitive structures were grown by molecular beam epitaxy and photodetector de-vices were fabricated. The structures were characterized by reflection high-energy electron diffraction (RHEED), reflectance anisotropy spectroscopy (RAS) and atomic force microscopy (AFM). Spectral charac-teristics of p-i-n structures were calculated. It is shown that obtained structures have atomically smooth surface and abrupt heterointerfaces. Room-temperature I-V measurements of fabricated photodetectors showed low dark current Id=3.38 nA at reverse bias Urev=5 V. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/36131
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)