Gallium Arsenide Czokhralski Crystal Growth with High Oscillatory Influences

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Title	Gallium Arsenide Czokhralski Crystal Growth with High Oscillatory Influences
Authors	Kosushkin, V.G. Kozhitov, S.L. Emelyanov, S.G. Parkhomenko, Yu.N. Kozhitov, L.V.
ORCID
Keywords	Crystal growth Ultrasonic vibration Homogeneity
Type	Article
Date of Issue	2014
URI	http://essuir.sumdu.edu.ua/handle/123456789/36329
Publisher	Sumy State University
License	Copyright not evaluated
Citation	V.G. Kosushkin, S.L. Kozhitov, S.G. Emelyanov, et al., J. Nano- Electron. Phys. 6 No 3, 03043 (2014)
Abstract	The influence of ultrasound introduced into the melt during the growth of single crystals of gallium ar-senide. Ultrasonic vibrations had a frequency of 820 kHz and amplitude of 0.1-0.2 micrometer. Found an increase in the homogeneity of impurity distribution of the bands growth without change of the dislocation structure of single crystals. In the simulation result of the ultrasonic wave interaction with the melt in the crucible on the basis of the theory of formation of phases is established that nucleation rate associated with the frequency and amplitude of the ultrasonic vibration acting on the melt. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/36329
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)