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Title | Study of the correlation between structural and photoluminescence properties of CdSe thin films deposited by close-spaced vacuum sublimation |
Authors |
Hnatenko, Yurii Pavlovych
Opanasiuk, Anatolii Serhiiovych Ivashchenko, Maksym Mykolaiovych Bukivskyi, Petro Mykolaiovych Faryna, Ivan Oleksandrovych |
ORCID |
http://orcid.org/0000-0002-8173-3948 http://orcid.org/0000-0002-1888-3935 http://orcid.org/0000-0002-4611-0956 |
Keywords |
Crystal structure X-ray diffraction Defects Polycrystalline deposition Semiconducting II–VI materials |
Type | Article |
Date of Issue | 2014 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/37075 |
Publisher | Elsevier Ltd |
License | |
Citation | Study of the correlation between structural and photoluminescence properties of CdSe thin films deposited by close-spaced vacuum sublimation / Yu.P.Gnatenko, A.S.Opanasyuk, M.M.Ivashchenko, P.M.Bukivskij, I.O.Faryna // «Materials Science in Semiconductor Processing» 2014, V. 26, P.663-668 |
Abstract |
CdSe polycrystalline films were deposited by a close-spaced vacuum sublimation method at different substrate temperatures(Ts) using glass slides as substrates. At Ts<673K the films have a structure with strong dispersion of grain size(d) (from0.1to0.3 μm). In this case the layer-by-layer mechanism determines the growth process of the layers. For
Ts=873K they have a columnar-like structure with a clear growth texture and the average grain size d=3–4 μm. The films obtained at Ts>473K are n-type and only correspond to a
single wurtzite phase. The crystallites are preferentially oriented with the(102) planes parallel to the substrate. At lower temperatures the films are bi-phase. The microstress
level in CdSe films obtained at Тs=873 K (0.5 10 3) is considerably smaller than for the films deposited at Тs=773K (4 10 3). Increase of the value of Ts improves the
stoichiometry of CdSe films. Analysis of the low-temperature photoluminescence(PL)
spectra let us determine the nature and energy of point and extended defects in the investigated films. It was shown that the films contain Na(Li) and P residual impurities.
The results of the structural and PL measurements showed that the CdSe polycrystalline
films are of fairly good crystal and optical quality for Ts=873K and can be suitable for various applications.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/37075 |
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