Effect of Substrate Temperature on the Properties of PECVD SiCN Films

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Title	Effect of Substrate Temperature on the Properties of PECVD SiCN Films
Authors	Porada, O.K. Kozak, A.O. Ivashchenko, V.I Ivashchenkо, L.A. Tomila, V.
ORCID
Keywords	PECVD Hexamethyldisilazane SiCN films FTIR Nanoindentation
Type	Article
Date of Issue	2014
URI	http://essuir.sumdu.edu.ua/handle/123456789/37148
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Proc. NAP 3, 01NTF12 (2014)
Abstract	An influence of substrate temperature on the properties of SiCN films deposited on silicon substrates by plasma enhanced chemical vapor deposition (PECVD) technique using hexamethyldisilazane is analyzed. The films were studied using XRD, FTIR, XPS, AFM, Knoop hardness test and nanoindentation. It was established that all films were X-ray amorphous and had low surface roughness. Hydrogen effusion takes place above 400 °C, which leads to corresponding changes in chemical bonding and mechanical properties of the films.
Appears in Collections:	Наукові видання (ЕлІТ)