Simulation of tunnel junction in cascade solar cell (GaAs/Ge) using AMPS-1D

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Title	Simulation of tunnel junction in cascade solar cell (GaAs/Ge) using AMPS-1D
Authors	Dennai, B. Slimane, H.B. Helmaoui, A.
ORCID
Keywords	AMPS-1D Multi-junction GaAs Tunnel junction
Type	Article
Date of Issue	2014
URI	http://essuir.sumdu.edu.ua/handle/123456789/38414
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Benmoussa Dennai, H. Ben Slimane, A. Helmaoui, J. Nano- Electron. Phys. 6 No 04001, 4 (2014)
Abstract	The development of the tunnel junction interconnect was key the first two-terminal monolithic, multijunction solar cell development. This paper describes simulation for the tunnel junction (GaAs) between top cell (GaAs) and bottom cell (Ge). This solar cell cascade was simulated when using one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D). In the simulation, the thickness of the tunnel junction layer was varied from 10 to 50 nm. By varying thickness of tunnel junction layer the simulated device performance was demonstrate in the form of current-voltage(I-V) characteristics and quantum efficiency (QE).
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)