Confined Energy State Based Hypothetical Observations about Device Parameters of AlGaN / GaN HEMT

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Title	Confined Energy State Based Hypothetical Observations about Device Parameters of AlGaN / GaN HEMT
Authors	Das, Palash Biswas, Dhrubes
ORCID
Keywords	AlGaN / GaN Modeling Threshold voltage Linearity
Type	Article
Date of Issue	2015
URI	http://essuir.sumdu.edu.ua/handle/123456789/39049
Publisher	Sumy State University
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Citation	Palash Das, Dhrubes Biswas, J. Nano- Electron. Phys. 7 No 1, 01006 (2015)
Abstract	In this paper, the gate threshold voltage of AlGaN / GaN HEMT devices has been analytically predicted based on the calculated energy levels inside triangular quantum well at the hetero-interface and found to be comparable with experimental data. The conceptual explanation of device linearity in large signal applications has been presented in terms of quantized energy levels in the quantum well. The dependence of threshold voltage and linear operable gate voltage range on a newly introduced parameter named “Surface Factor” is analyzed as well.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)