Investigation of the Irradiation Influence with High-energy Electrons on the Electrical Parameters of the IGBT-transistors

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Title	Investigation of the Irradiation Influence with High-energy Electrons on the Electrical Parameters of the IGBT-transistors
Authors	Murashev, V.N. Konovalov, M.P. Legotin, S.A. Didenko, S.I. Rabinovich, O.I. Krasnov, A.A. Kuzmina, K.A.
ORCID
Keywords	IGBT-transistors Irradiation Systems Radioisotope
Type	Article
Date of Issue	2015
URI	http://essuir.sumdu.edu.ua/handle/123456789/39054
Publisher	Sumy State University
License	Copyright not evaluated
Citation	V.N. Murashev, M.P. Konovalov, S.A. Legotin, et al., J. Nano- Electron. Phys. 7 No 1, 01011 (2015)
Abstract	The results of studies of the effectiveness of the radiation method for control the characteristics of the IGBT transistors are shown. Experimental results on the effect of irradiation with high-energy electrons with an energy of 6 MeV for dynamic and static parameters of the IGBT transistors of company International Rectifier IRGB14C40L are discussed.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)