Single crystal aluminum deposit formation on isotropic substrates by means of self-organized ion sputtering

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Title	Single crystal aluminum deposit formation on isotropic substrates by means of self-organized ion sputtering
Authors	Perekrestov, Viacheslav Ivanovych Korniushchenko, Hanna Serhiivna Kosminska, Yuliia Oleksandrivna
ORCID	http://orcid.org/0000-0002-2996-1003 http://orcid.org/0000-0002-2175-9206
Keywords	self-organized formation isotropic substrate
Type	Article
Date of Issue	2006
URI	http://essuir.sumdu.edu.ua/handle/123456789/4077
Publisher	Technical Physics Letters
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Citation	Perekrestov, V.I. Single crystal aluminum deposit formation on isotropic substrates by means of self-organized ion sputtering [Текст] / V.I. Perekrestov, H.S. Korniushchenko, Y.O. Kosminska // Technical Physics Letters. — 2006. — vol. 32. — No. 10. — pp. 868-870
Abstract	A substantially new technological approach is considered, which is based on the self-organized formation of aluminum single crystal layer on isotropic substrates in the course of stationary condensation of reverse diffusion fluxes in a planar dc magnetron. The functional possibilities of self-organized ion sputtering systems are discussed. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/4077
Appears in Collections:	Наукові видання (ЕлІТ)