AC Impedance Analysis of the Al/ZnO/p-Si/Al Schottky Diode: C-V Plots and Extraction of Parameters

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Title	AC Impedance Analysis of the Al/ZnO/p-Si/Al Schottky Diode: C-V Plots and Extraction of Parameters
Authors	Benhaliliba, M. Ocak, Y.S. Mokhtari, H. Kiliçoglu, T.
ORCID
Keywords	Spray pyrolysis ZnO / p-Si Schottky diode C-V characteristics Capacitance-Voltage Interface density
Type	Article
Date of Issue	2015
URI	http://essuir.sumdu.edu.ua/handle/123456789/41367
Publisher	Sumy State University
License	Copyright not evaluated
Citation	M. Benhaliliba, Y.S. Ocak, H. Mokhtari, T. Kiliçoglu, J. Nano- Electron. Phys. 7 No 2, 02001 (2015)
Abstract	In this research, we report on the measurement of the capacitance-voltage (C-V) characteristics Al / ZnO / p-Si / Al Schottky diode at room temperature and in dark condition fabricated by spray pyrolysis process. C-V characteristics, within the range of frequencies 5 kHz-5 MHz, are investigated and microelectronic parameters are extracted. Donor density and diffusion potential vary with frequency from 15 to 28 1014 cm – 3, 0.21 to 0.45 V. Besides, the interface state density of Al /ZnO /pSi/Al Schottky is determined and found to be 1012 (eV cm²) – 1. Calculated at 1 MHz, the interfacial layer thickness and depletion layer width are of 760 Å and 0.28 m.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)