Surface Potential and Threshold Voltage Model of Fully Depleted Narrow Channel SOI MOSFET Using Analytical Solution of 3D Poisson’s Equation

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Title	Surface Potential and Threshold Voltage Model of Fully Depleted Narrow Channel SOI MOSFET Using Analytical Solution of 3D Poisson’s Equation
Authors	Mani, Prashant Pandey, Manoj Kumar
ORCID
Keywords	SOI Channel length Threshold voltage 3D modeling
Type	Article
Date of Issue	2015
URI	http://essuir.sumdu.edu.ua/handle/123456789/41375
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Prashant Mani, Manoj Kumar Pandey, J. Nano- Electron. Phys. 7 No 2, 02002 (2015)
Abstract	The present paper is about the modeling of surface potential and threshold voltage of Fully Depleted Silicon on Insulator MOSFET. The surface potential is calculated by solving the 3D Poisson’s equation analytically. The appropriate boundary conditions are used in calculations. The effect of narrow channel width and short channel length for suppression of SCE is analyzed. The narrow channel width effect in the threshold voltage is analyzed for thin film Fully Depleted SOI MOSFET.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)