Analysis of the p-i-n-structures Electrophysical Characteristics Influence on the Spectral Characteristics Sensitivity

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Title	Analysis of the p-i-n-structures Electrophysical Characteristics Influence on the Spectral Characteristics Sensitivity
Authors	Murashev, V.N. Yurchuk, S.Yu. Legotin, S.A. Yaromskiy, V.P. Osipov, Yu.V. Astahov, V.P. El’nikov, D.S. Didenko, S.I. Rabinovich, O.I. Kuz’mina, K.A.
ORCID
Keywords	Silicon p-i-n-photodiode characteristics simulation Spectral sensitivity Optimization design of photodetectors
Type	Article
Date of Issue	2015
URI	http://essuir.sumdu.edu.ua/handle/123456789/41477
Publisher	Sumy State University
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Citation	V.N. Murashev, S.Yu. Yurchuk, S.A. Legotin, et al., J. Nano- Electron. Phys. 7 No 2, 02023 (2015)
Abstract	In this paper the simulation of the silicon p-i-n-photodiodes spectral sensitivity characteristics was carried out. The analysis of the semiconductor material characteristics (the doping level, lifetime, surface recombination velocity), the construction and operation modes on the photosensitive structures characteristics in order to optimize them were investigated.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)