Extracted Electronic Parameters of a Novel Ag/SnO2:In/Si/Au Schottky Diode for Solar Cell Application

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Title	Extracted Electronic Parameters of a Novel Ag/SnO2:In/Si/Au Schottky Diode for Solar Cell Application
Authors	Benhaliliba, Mostefa
ORCID
Keywords	Schottky diode Tin oxide Current-voltage measurements Ideality factor
Type	Article
Date of Issue	2015
URI	http://essuir.sumdu.edu.ua/handle/123456789/41489
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Mostefa Benhaliliba, J. Nano- Electron. Phys. 7 No 2, 02029 (2015)
Abstract	The effect of indium on the characteristics of Ag / SnO2 : In / Si / Au Schottky diode (SD) is studied. The electronic parameters, ideal factor, the effective barrier, flat band barrier height, the series resistance, the saturation current density of the diodes were extracted from the current voltage (I-V) and capacitance voltage (C-V) characteristics. The series resistance (Rs) determined by Cheung method increases (508-534 Ω) with In doping level while the barrier height still constant around 0.57 V. Norde approximation gives a similar barrier height values of 0.69 V but the series resistance reaches higher values of 5500 Ω.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)