Hard Si-C-N Chemical Vapor Deposited Films

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Title	Hard Si-C-N Chemical Vapor Deposited Films
Authors	Porada, O.K. Kozak, A.O. Ivashchenko, V.I. Dub, S.M. Pohrebniak, Oleksandr Dmytrovych
ORCID	http://orcid.org/0000-0002-9218-6492
Keywords	Sі–C–N films PECVD hexamethyldisilazane substrate temperature nanohardness
Type	Conference Papers
Date of Issue	2015
URI	http://essuir.sumdu.edu.ua/handle/123456789/42711
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Hard Si-C-N Chemical Vapor Deposited Films [Текст] / O.K. Porada, A.O. Kozak, V.I. Ivashchenko et al. // Nanomaterials: Applications & Properties (NAP-2015) : Proceedings of the International Conference. — Sumy : Sumy State University, 2015. — V.4, No1. — 01NTF09.
Abstract	Si-C-N thin films were deposited on silicon substrates by plasma-enhanced chemical vapor deposition (PECVD) using hexamethyldisilazane as the main precursor. An influence of substrate temperature (TS) on film properties was analyzed. It was established that the deposited films were x-ray amorphous. The growth of the films slows down with increasing substrate temperature. The distribution of Si–C, Si–N and C–N bonds were almost independent of TS, whereas the number of С–Н, Si–H and N–H bonds essentially decreased when substrate temperature increased. The nanohardness and elastic modulus increased with TS due to a reduction of the weak hydrogen bonds.
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