Effect of Laser Annealing on the Properties of the Surface of Polycrystalline CdZnTe Thick Film

Znamenshchykov, Yaroslav Volodymyrovych; Kosiak, Volodymyr Volodymyrovych; Opanasiuk, Anatolii Serhiiovych; Fochuk, P.M.

Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/42798

Or use following links to share this resource in social networks: Recommend this item

Title	Effect of Laser Annealing on the Properties of the Surface of Polycrystalline CdZnTe Thick Film
Authors	Znamenshchykov, Yaroslav Volodymyrovych Kosiak, Volodymyr Volodymyrovych Opanasiuk, Anatolii Serhiiovych Fochuk, P.M.
ORCID	http://orcid.org/0000-0002-6866-0414 http://orcid.org/0000-0002-1888-3935
Keywords	CdZnTe thick films laser annealing Raman semiconductor X-ray detectors
Type	Conference Papers
Date of Issue	2015
URI	http://essuir.sumdu.edu.ua/handle/123456789/42798
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Effect of Laser Annealing on the Properties of the Surface of Polycrystalline CdZnTe Thick Film [Текст] / Ya.V. Znamenshchykov, V.V. Kosyak, A.S. Opanasyuk, P.M. Fochuk // Nanomaterials: Applications & Properties (NAP-2015) : Proceedings of the International Conference. — Sumy : Sumy State University, 2015. — V.4, No1. — 01NTF16.
Abstract	In this work effect of laser annealing on properties of surface of CdxZn1-xTe (CZT) films was studied. CZT layers were deposited by co-evaporation of CdTe and ZnTe using close-spaced vacuum sublimation (CSVS) method. Structural properties and chemical composition of films were studied by X-ray Diffraction (XRD) and Energy Dispersive Spectroscopy (EDS). The annealing of the sample was carried out with the help of micro-Raman infrared laser of 785 nm wavelength at maximal 100x magnification. It was established that laser annealing of the surface substantially causes redistribution of Zn atoms. More detailed study of the sample by the scanning of surface with the micro-Raman method allows to determine trend in this process and to detect Te-rich zones. Improvement of the crystal quality near annealed area of the thick film was achieved.
Appears in Collections:	Наукові видання (ЕлІТ)