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Title | Effect of Laser Annealing on the Properties of the Surface of Polycrystalline CdZnTe Thick Film |
Authors |
Znamenshchykov, Yaroslav Volodymyrovych
Kosiak, Volodymyr Volodymyrovych Opanasiuk, Anatolii Serhiiovych Fochuk, P.M. |
ORCID |
http://orcid.org/0000-0002-6866-0414 http://orcid.org/0000-0002-1888-3935 |
Keywords |
CdZnTe thick films laser annealing Raman semiconductor X-ray detectors |
Type | Conference Papers |
Date of Issue | 2015 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/42798 |
Publisher | Sumy State University |
License | |
Citation | Effect of Laser Annealing on the Properties of the Surface of Polycrystalline CdZnTe Thick Film [Текст] / Ya.V. Znamenshchykov, V.V. Kosyak, A.S. Opanasyuk, P.M. Fochuk // Nanomaterials: Applications & Properties (NAP-2015) : Proceedings of the International Conference. — Sumy : Sumy State University, 2015. — V.4, No1. — 01NTF16. |
Abstract |
In this work effect of laser annealing on properties of surface of CdxZn1-xTe (CZT) films was studied. CZT layers were deposited by co-evaporation of CdTe and ZnTe using close-spaced vacuum sublimation (CSVS) method. Structural properties and chemical composition of films were studied by X-ray Diffraction (XRD) and Energy Dispersive Spectroscopy (EDS). The annealing of the sample was carried out with the
help of micro-Raman infrared laser of 785 nm wavelength at maximal 100x magnification. It was established that laser annealing of the surface substantially causes redistribution of Zn atoms. More detailed study of the sample by the scanning of surface with the micro-Raman method allows to determine trend in this process and to detect Te-rich zones. Improvement of the crystal quality near annealed area of the thick
film was achieved. |
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Znamenshchykov.pdf | 625.85 kB | Adobe PDF | -1575277093 |
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