Simulation the Beta Power Sources Characteristics

Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/42932

Or use following links to share this resource in social networks: Recommend this item

Title	Simulation the Beta Power Sources Characteristics
Authors	Yurchuk, S.Yu. Legotin, S.A. Murashev, V.N. Krasnov, A.A. Omel’chenko, Yu.K. Osipov, Yu.V. Didenko, S.I. Rabinovich, O.I.
ORCID
Keywords	Betavoltic effect of power beta source Modeling the characteristics of the spectral sensitivity Design optimization
Type	Article
Date of Issue	2015
URI	http://essuir.sumdu.edu.ua/handle/123456789/42932
Publisher	Sumy State University
License
Citation	S.Yu. Yurchuk, S.A. Legotin, J. Nano- Electron. Phys. 7 No 3, 03014 (2015)
Abstract	In this paper the simulation of silicon beta-stimulated power sources spectral sensitivity characteristics was carried out. It was analyzed the influence of the semiconductor material characteristics (the doping level, lifetime) and power supply design on the photosensitive structures characteristics in order to optimize them.
Appears in Collections:	Наукові видання (ЕлІТ)