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Title | Effect of reaction time on structural properties of ZnO:Al films |
Authors |
Berestok, Taisiia Oleksandrivna
Opanasiuk, Anatolii Serhiiovych Kurbatov, Denys Ihorovych Cheong, H. Suryavanshi, Priya Trivedi, U.B. Panchal, Ch. |
ORCID |
http://orcid.org/0000-0002-1888-3935 http://orcid.org/0000-0002-2754-6367 |
Keywords |
ZnO ZnO:Al структура structure суб-структури суб-структуры sub-structure chemical bath deposition |
Type | Article |
Date of Issue | 2015 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/43178 |
Publisher | Proceedings of International Symposium on Semiconductor Materials and Devices |
License | |
Citation | Effect of reaction time on structural properties of ZnO:Al films [ Текст ] / T.O. Berestok, A.S. Opanasyuk, D.I. Kurbatov et al. // Proceedings of International Symposium on Semiconductor Materials and Devices. - 2015. - ISSMD-3. - P. 2-5. |
Abstract |
Undoped and Al doped ZnO films are obtained by chemical bath deposition onto glass substrates. Investigations of the effect of reaction time on structural and sub-structural features were carried out using high resolution scanning electron microscopy (SEM) and X-ray diffraction analysis. The effects of deposition time on elemental composition are found. Deposited ZnO and ZnO:Al films have a hexagonal structure with growth texture of [002]. Lattice constants of undoped material weakly depend on the time of synthesis and vary in the range of a = 0.32486-0.32548 nm, c = 0.52064-0.52149 nm. Simultaneously, lattice constants of Al doped ZnO films vary in the wide range: a = 0.32490-0.31997 nm, c = 0.52293-0.52116 nm. The coherent scattering domain size (CSD) of undoped ZnO are in the range of (L(100) = (24.5 - 27.3) nm, L(002) = (26.4 - 28.8) nm, L(101) = (25.0 - 27.1) nm). In the ZnO:Al films the CSD size increased with increasing the duration of their synthesis from 45 to 90 min (L(100) = (19.5 - 52.3) nm, L(002) = (23.2 - 55.0) nm, L(101) = (17.6 - 48.3) nm). Further increase of reaction time up to 120 min led to a significant reduction of the CSD size in all crystallographic directions (L(100) = 38.0 nm, L(002) = 39.0 nm, L(101) = 39.4 nm) which was due to the peculiarities of ZnO:Al growth. |
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File | Size | Format | Downloads |
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Berestok_ZnO_ZnOAl.pdf | 879.15 kB | Adobe PDF | 1924003598 |
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