The Current-voltage Characteristics Simulation of the Betavoltaic Power Supply

Urchuk, S.U.; Krasnov, A.A.; Legotin, S.A.; Didenko, S.I.; Murashev, V.N.; Omel’chenko, U.C.; Osipov, U.V.; Rabinovich, O.I.; Popkova, A.V.

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Title	The Current-voltage Characteristics Simulation of the Betavoltaic Power Supply
Authors	Urchuk, S.U. Krasnov, A.A. Legotin, S.A. Didenko, S.I. Murashev, V.N. Omel’chenko, U.C. Osipov, U.V. Rabinovich, O.I. Popkova, A.V.
ORCID
Keywords	Betavoltaic effect Beta power source Betavoltaic battery p-i-n diode I-V characteristic simulation
Type	Article
Date of Issue	2015
URI	http://essuir.sumdu.edu.ua/handle/123456789/43191
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Urchuk, S.U. The Current-voltage Characteristics Simulation of the Betavoltaic Power Supply [Текст] / S.U. Urchuk, A.A. Krasnov, S.A. Legotin et al. // Журнал нано- та електронної фізики. — 2015. — Т.7, №4. — 04005-1.
Abstract	In order to optimize betavoltaic power supply it was calculated the current-voltage characteristics when changing the depth of the upper p-layer and at changing doping levels structure areas. It is shown that an increase in the depth reduces the short-circuit current and thus reduces the open circuit voltage. It has been observed that the concentration of the lightly doped region more significantly influence on the current-voltage characteristics than the depth of the p-n-junction. The concentration of the n-region, equal to 1014 cm – 3, can be considered as during betavoltaic power supply design. It is shown that, by increasing the power supply activity the conversion efficiency of the structure increases, too.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)