The Spectral Sensitivity Characteristics Simulation of the Silicon p-i-n-structure with High Resistance

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Title	The Spectral Sensitivity Characteristics Simulation of the Silicon p-i-n-structure with High Resistance
Authors	Legotin, S.A. Murashev, V.N. Yurchuk, S.Yu. Yaromskiy, V.P. Astahov, V.P. Kuz’mina, K.A. Rabinovich, O.I. El’nikov, D.S. Osipov, U.V. Krasnov, A.A. Didenko, S.I.
ORCID
Keywords	Silicon p-i-n structure Design optimization
Type	Article
Date of Issue	2015
URI	http://essuir.sumdu.edu.ua/handle/123456789/43210
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Legotin, S.A. The Spectral Sensitivity Characteristics Simulation of the Silicon p-i-n-structure with High Resistance [Текст] / S.A. Legotin, V.N. Murashev, S.Yu. Yurchuk et al. // Журнал нано- та електронної фізики. — 2015. — Т.7, №4. — 04017-1.
Abstract	In the paper a simulation program for photovoltaic parameters of semiconductor devices and results of their investigation are presented. The results of the program usage based on an example of calculating the influence of the high-resistance "well" thickness in the silicon p-i-n-diode spectral response are discussed. For the accuracy of the program estimation it was compared the theoretical spectral characteristics of a silicon PIN-diode 5 kOhm substrate with the experimental data.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)