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Title | The Spectral Sensitivity Characteristics Simulation of the Silicon p-i-n-structure with High Resistance |
Authors |
Legotin, S.A.
Murashev, V.N. Yurchuk, S.Yu. Yaromskiy, V.P. Astahov, V.P. Kuz’mina, K.A. Rabinovich, O.I. El’nikov, D.S. Osipov, U.V. Krasnov, A.A. Didenko, S.I. |
ORCID | |
Keywords |
Silicon p-i-n structure Design optimization |
Type | Article |
Date of Issue | 2015 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/43210 |
Publisher | Sumy State University |
License | |
Citation | Legotin, S.A. The Spectral Sensitivity Characteristics Simulation of the Silicon p-i-n-structure with High Resistance [Текст] / S.A. Legotin, V.N. Murashev, S.Yu. Yurchuk et al. // Журнал нано- та електронної фізики. — 2015. — Т.7, №4. — 04017-1. |
Abstract |
In the paper a simulation program for photovoltaic parameters of semiconductor devices and results of
their investigation are presented. The results of the program usage based on an example of calculating the
influence of the high-resistance "well" thickness in the silicon p-i-n-diode spectral response are discussed.
For the accuracy of the program estimation it was compared the theoretical spectral characteristics of a silicon
PIN-diode 5 kOhm substrate with the experimental data. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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