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Title | Heterostructure Active Area Optimization by Simulation |
Authors |
Rabinovich, O.I.
Didenko, S.I. Legotin, S.A. Fedorchenko, I.V. Osipov, U.V. |
ORCID | |
Keywords |
Light-emitting diode InGaN Simulation |
Type | Article |
Date of Issue | 2015 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/43238 |
Publisher | Sumy State University |
License | |
Citation | Rabinovich, O.I. Heterostructure Active Area Optimization by Simulation [Текст] / O.I. Rabinovich, S.I. Didenko, S.A. Legotin et al. // Журнал нано- та електронної фізики. — 2015. — Т.7, №4. — 04035-1. |
Abstract |
Changing LED performance characteristics, depending on Indium atoms concentration and at different
temperatures were simulated. It was suggested that a LED having p-n junction area S0 can be considered
as a sum of “SmallLEDs (SLEDs)” electrically connected in parallel, each SLED has its own In-content and
its own p-n junction area S(X). Good correlation in simulation and experimental results has been obtained.
It was determined that the best structure for AlGaInN NH is p+GaN / p+Al0.2Ga0.8N / 4(n-InxGa1 – xN-n-
GaN) / n+GaN. The main thing is that in the NH AA there are 4QW-in two central ones there is maximum
radiation and two ones at the both ends of active region are “barriers” which help to concentrate electrons
/ holes in active region and additionally “protect” QW from different defects. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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