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Title | Selective processes that proceed during formation of aluminum layers near the phase equilibrium in a plasma–condensate system |
Authors |
Perekrestov, Viacheslav Ivanovych
Korniushchenko, Hanna Serhiivna ![]() Kosminska, Yuliia Oleksandrivna ![]() |
ORCID |
http://orcid.org/0000-0002-2996-1003 http://orcid.org/0000-0002-2175-9206 |
Keywords |
plasma-condensate system phase equilibrium |
Type | Article |
Date of Issue | 2008 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/4369 |
Publisher | Technical Physics |
License | Copyright not evaluated |
Citation | Perekrestov, V.I. Selective processes that proceed during formation of aluminum layers near the phase equilibrium in a plasma–condensate system [Текст] / V.I. Perekrestov, H.S. Korniushchenko, Y.A. Kosminska // Technical Physics. — 2008. — vol. 53. — No. 10. — pp. 1364-1370 |
Abstract |
The mechanisms of pore formation in aluminum condensates produced using a radically new technological approach that is based on self-organized sputtering systems are studied. The main technological parameters of pore formation are found to be determined by the closeness to the phase equilibrium in the plasma–condensate system and by the predominant contribution of structural or field selectivity to atom-by-atom assembling of the condensate.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/4369 |
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Selective processes that proceed during formation of aluminum layers near the phase equilibrium in a plasma–condensate system.pdf | 782.4 kB | Adobe PDF | 1163722961 |
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