Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

Opanasiuk, Anatolii Serhiiovych; Kosiak, Volodymyr Volodymyrovych; Znamenshchykov, Yaroslav Volodymyrovych; Gnatenko, Yu.P.; Čerškus, Aurimas; Grase, L.; Medvids, A.; Mezinskis, G.

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Title	Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation
Authors	Opanasiuk, Anatolii Serhiiovych Kosiak, Volodymyr Volodymyrovych Znamenshchykov, Yaroslav Volodymyrovych Gnatenko, Yu.P. Čerškus, Aurimas Grase, L. Medvids, A. Mezinskis, G.
ORCID	http://orcid.org/0000-0002-1888-3935 http://orcid.org/0000-0002-6866-0414
Keywords	CdZnTe низькотемпературна фотолюмінесценція низкотемпературная фотолюминесценция Low-temperaturephotoluminescence напівпровідникові тонкі плівки полупроводниковые тонкие пленки Semiconductor thick films оптична якість оптическое качество Optical quality точкові і лінійні дефекти точечные и линейные дефекты Point and extended defects
Type	Article
Date of Issue	2016
URI	http://essuir.sumdu.edu.ua/handle/123456789/44311
Publisher	Elsevier
License	Copyright not evaluated
Citation	Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation [Текст] / V. Kosyak, Y.Znamenshchykov, Aurimas Čerškus et al. // Journal of Luminescence. - 2016 . - Vol.171. - P.176-182.
Abstract	Polycrystalline Cd1 xZnxTe thick films with thicknesses of about 30 μm have been deposited on a Mo coated glass substrate by means of close-spaced vacuum sublimation technique. X-ray diffraction mea- surements have shown that the films obtained have only cubic zinc blende phase.The influence of Zn concentration onthe photoluminescence (PL) spectra of Cd1 xZnxTe films was investigated. This let us determine the nature and energy structure of the intrinsic defects and residual impurities in the films.
Appears in Collections:	Наукові видання (ЕлІТ)