Theoretical Analysis of Optical Gain in GaN / AlxGa1 – x N Quantum Well Lasers

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Title	Theoretical Analysis of Optical Gain in GaN / AlxGa1 – x N Quantum Well Lasers
Authors	Fellaoui, K. Abouelaoualim, D. Elkadadra, A. Oueriagli, A.
ORCID
Keywords	III-Nitride AlGaN / GaN quantum wells (QWs) Optical gain Laser diodes
Type	Article
Date of Issue	2015
URI	http://essuir.sumdu.edu.ua/handle/123456789/44473
Publisher	Sumy State University
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Citation	K. Fellaoui, D. Abouelaoualim, A. Elkadadra, A. Oueriagli, J. Nano- Electron. Phys. 7 No 4, 04061 (2015)
Abstract	In this study, we investigated numerically the effect of aluminum concentration, temperature and well width on optical gain GaN / AlxGa1 – xN quantum well lasers, taken into account effective mass approximation. The numerical results clearly show that the increasing of well width, and decreasing of temperature and Aluminum concentration, the optical gain increases.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)