Hopping Conductivity and Negative Magnetoresistance of the Bulk Nanograined Bi2Te3 Material

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Title	Hopping Conductivity and Negative Magnetoresistance of the Bulk Nanograined Bi2Te3 Material
Authors	Ivanov, O.N. Lyubushkin, R.A. Yaprintsev, M.N. Sudzhanskaya, I.V.
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Keywords	Bulk nanograined materials Hopping conductivity Magnetoresistance
Type	Article
Date of Issue	2015
URI	http://essuir.sumdu.edu.ua/handle/123456789/44493
Publisher	Sumy State University
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Citation	O.N. Ivanov, R.A. Lyubushkin, M.N. Yaprintsev, J. Nano- Electron. Phys. 7 No 4, 04073 (2015)
Abstract	The bulk nanograined Bi2Te3 material was prepared by the microwave assisted solvothermal method and cold isostatic pressure method. It was found that above T* ≈ 190 K the temperature dependence of the specific electrical resistivity of material is of metallic type, while below this temperature a semiconductor conductivity takes place. Within the temperature ΔT ≈ 90 K-35 K interval the electrical conductivity of material can be described by the variable-range hopping conductivity mechanism. Negative magnetoresistance was observed at the same temperature interval.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)